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X5R1C BU806 L0639 NJL51 128C80E 62000 5807M 2N6707
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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION With TO-3 package High current APPLICATIONS They are especially intended for high current and fast switching applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5038/2N5039
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO PARAMETER 2N5038 Collector-base voltage 2N5039 2N5038 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5039 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae Open collector Open base 75 7 20 30 5 140 200 -65~200 ae ae V A A A W Open emitter 120 90 V CONDITIONS VALUE 150 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ae /W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5038/2N5039
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 2N5038 ICEO Collector cut-off current 2N5039 2N5038 ICEV Collector cut-off current 2N5039 2N5038 IEBO Emitter cut-off current 2N5039 hFE-1 DC current gain 2N5038 hFE-2 DC current gain 2N5039 Is/b Second breakdown collector current IC=10A ; VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 5 0.9 A IC=2A ; VCE=5V IC=12A ; VCE=5V 20 100 50 VEB=5V; IC=0 15 250 VCE=55V; IB=0 VCE=140V; VBE=-1.5V VCE=100V ;TC=150ae VCE=110V; VBE=-1.5V VCE=85V ;TC=150ae 50 10 50 10 5 mA IC=10A ; VCE=5V VCE=70V; IB=0 20 mA V 2.5 3.3 V V V 75 CONDITIONS MIN 90 V TYP MAX UNIT SYMBOL
VCEO(sus)
VCEsat-1
Collector-emitter saturation voltage
VCEsat-2 VBEsat
Collector-emitter saturation voltage Collector-emitter saturation voltage 2N5038
VBE
Base-emitter voltage
mA
Switching times tr ts tf Rise time Storage time Fall time For 2N5038 IC=12A ;IB1=- IB2=1.2A ;Vcc=30V For 2N5039 IC=10A ;IB1=- IB2=1A ;Vcc=30V 0.5 1.5 0.5 |I |I |I s s s
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5038/2N5039
Fig.2 outline dimensions (unindicated tolerance:A
0.10mm)
JMnic


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